Power MOSFETs
PolarHV TM HiPerFET IXFH 140N10P
IXFT 140N10P
N-Channel Enhancement Mode
Fast Intrinsic Diode
Avalanche Rated
V DSS
I D25
R DS(on)
t rr
= 100 V
= 140 A
≤ 11 m ?
≤ 150 ns
Symbol
Test Conditions
Maximum Ratings
TO-247 (IXFH)
V DSS
V DGR
T J = 25 ° C to 175 ° C
T J = 25 ° C to 175 ° C; R GS = 1 M ?
100
100
V
V
V GS
V GSM
I D25
Continuous
Transient
T C = 25 ° C
± 20
± 30
140
V
V
A
G
D
S
D (TAB)
I D(RMS)
External lead current limit
75
A
I DM
I AR
E AR
T C = 25 ° C, pulse width limited by T JM
T C = 25 ° C
T C = 25 ° C
300
60
80
A
A
mJ
TO-268 (IXFT)
E AS
dv/dt
P D
T C = 25 ° C
I S ≤ I DM , di/dt ≤ 100 A/ μ s, V DD ≤ V DSS ,
T J ≤ 150 ° C, R G = 4 ?
T C = 25 ° C
2.5
10
600
J
V/ns
W
G = Gate
S = Source
G
S
D = Drain
TAB = Drain
D (TAB)
T J
T JM
T stg
-55 ... +175
175
-55 ... +150
° C
° C
° C
International standard packages
T L
T SOLD
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10s
300
260
° C
° C
Features
l
M d
Weight
Mounting torque
TO-247
TO-268
(TO-247)
1.13/10 Nm/lb.in.
6.0 g
5.0 g
l
l
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Advantages
Symbol Test Conditions
Characteristic Values
(T J = 25 ° C, unless otherwise specified)
BV DSS V GS = 0 V, I D = 250 μ A
Min. Typ. Max.
100
V
l
l
l
Easy to mount
Space savings
High power density
V GS(th)
I GSS
I DSS
R DS(on)
V DS = V GS , I D = 4.0 mA
V GS = ± 20 V DC , V DS = 0
V DS = V DSS
V GS = 0 V
V GS = 10 V, I D = 0.5 I D25
V GS = 15 V, I D = 300 A
Note 1
T J = 175 ° C
3.0
9
5.0
± 100
25
500
11
V
nA
μ A
μ A
m ?
m ?
? 2006 IXYS All rights reserved
DS99213E(01/06)
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相关代理商/技术参数
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